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The following papers were presented in
WSEAS ICONN 2004, ICOSOLID 2004, ICOPLI 2004.
(Data Base in MicroSoft Access).
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| 102 Hot Electron Effects in Excitation of Visible Photoluminescence in Si Nanowires |
pp. 1021-1024 |
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by : T. Torchynska, L. Khomenkova, V. Zakharchenko, R. Zakharchenko, J. Gonzalez-Hernandez, Y. Vorobiev
Abstract: - Visible photoluminescence of Si nanowires prepared by electrochemical etching was studied with the use of photoluminescence spectral measurements, Atomic Force Microscopy and Magnetic Field effect. The photoluminescence spectra had no dependence upon the nanoparticle size, in contradiction with the model based on the quantum confinement effect. The magnetic field of 0.52 T has a noticeable influence on the luminescence intensity, but not on the emission spectra. The features observed confirm the hipothesis about the emission excitation by hot electrons created by the light absorption in nanowires which energy band structure remains practically the same as in the bulk Si. The effective mobility of electrons involved in the excitation process estimated from the effect value is around 30000 cm2/V•s, which greatly exceeds the normal electron mobility in Si at room temperature. |
| 103 The Low Trigger Voltage and Low Capacitance ESD Protection Device For High Frequency Application |
pp. 1031-1035 |
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by : Jian-Hsing Lee, Y. H. Wu, K. F. Yu, TC Ong
Abstract: - Using the asymmetric source/drain GGNMOS to minimize the device capacitance increasing, a SCR-based low-trigger voltage and low-capacitance ESD protection device (LVCESD) was developed successfully. Combining the secondary ESD protection device and resistor, the LVCESD can effectively protect the thin oxide (19Å) for RF input and I/O pads. |
| 104 Proper Boundary Conditions For The Imaging Problem Of A Negative-Refraction Slab Lens |
pp. 1041-1045 |
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by : Pi-Gang Luan, Hung-Da Chien, Chii-Chang Chen, Chi-Shung Tang
Abstract: - We investigate in this paper the imaging properties of an absorptive negative refraction slab. For a line source, by considering the boundary conditions approapriately, a geometric explanation to the reason of the thickness limitation on an ideal slab with $\varepsilon=\mu=n=1$ is given. We find that the ideal slab is not a perfect lens, and it cannot focus light into a real image, even imperfectly. To have any image, the boundaries of the slab have to be deformed or one has to use a lossy slab. The imaging properties are mainly determined by three parameters: the wavelength $\lambda$, the slab thickness $d$, and the distance $d_1$ from the source to the nearer boundary of the slab. Varying the ratios of $d/\lambda$ and $d_1/\lambda$, the image width can be changed from wavelength to subwavelength scales. When the images inside and behind the slab have widths of the wavelength scales, the energy density is concentrated at the two image spots. Though an image of subwavelength width can appear on the focal plane, however, beyond the slab boundaries the wave amplitude growths or decays exponentially, thus almost all energies are carried by the surface-plasmon-plariton (SPP) modes. This effect indicates that SPP indeed plays important roles in forming the subwavelength images, and this process does not contradict the uncertainty principle. |
| 105 Collective Optical Effect In Complement Left-Handed Material |
pp. 1051-1057 |
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by : S.-C. Wu, C.-F. Chen, W. C. Chao,
W.-J. Huang, L. Chen, Hsu, Chern
Abstract: - The Babinet¡¦s effect occurs at a long wavelength span of incident light during FTIR (Fourier Transform Infrared) spectroscopy scanning in complementary LHM (Left-Handed Material) samples. The occurring wavelength ranges from 4 to 20 m m under a scanned light source in 2.5~25 m m regime. The LHM sample consists of an SRR (Split Ring Resonator) adjacent to wire array in periodic order. Complement samples were prepared using standard integrated-circuit processes on a Si wafer. Gold nano particles were deposited on the conducting parts of patterns. The positive pattern is a sample that patched with periodic Au wire on the Si wafer. And the negative one is adopted with a reverse way, the wire part is empty of Au and the surrounding space is filled with Au particles. Transmittance-enhanced behavior was identified from those consequent data. The surface plasmon resonated effect on Au nano particle on top of surface seems to contribute the enhancement. |
| 106 A Quadtree Based Vehicles Recognition System |
pp. 1061-1065 |
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by : Pedro Barroso, Joaquim Amaral, André Mora, José Manuel Fonseca, Adolfo Steiger-Garção
Abstract: - This paper presents a Quadtree based Vehicles Recognition System (SIREVIA), which uses images captured by a digital camera for identifying the vehicle’s license plate. A methodology to identify the license plate in the captured image using digital image processing techniques and artificial intelligent techniques is presented. The plate location algorithm is based on the detection of high contrast areas along the image lines. The character recognition is preformed using a quadtree based object detection algorithm and an automatic classifier using decision trees trained for identifying all the alphabet letters and numbers. A prototype of an access control for a car parking is also presented. This application uses a database witch keeps the information about authorized cars, users and different access levels to a specific place. |
| 107 Exciton Energy Spectra And States Of Thin Crystalline Films |
pp. 1071-1075 |
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by : Sinisa Vucenovic, Jovan Setrajcic, Dejan Rakovic
Abstract: - Dispersion laws of Frenkel’s excitons in perturbed molecular films are found using method of two-time temperature Green's functions. Space boundaries and disturbing of energetic parameters on boundaries are considered as perturbations. The cubic crystalline system with complex cell, compound of two molecules (a and b), i.e. bimolecular film, was analyzed in harmonic approximation. The sharp discretisation energetic levels are obtained. That discretisation is expectable as well as narrowing of energetic zones as a consequence of adequate treatment of dimensional quantization or changing characteristics of molecules itself. Found conditions of existence of localized exciton states at boundaries are of special interest. |
| 108 Method of Auto-Revising the Conversion Coefficients of Four-Quadrant Photodetector |
pp. 1081-1087 |
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by : Xiaojun Tang, Junhua Liu, Liping Dang, Jian Chen
Abstract: - The balance among photovoltaic conversion coefficients of four channels of four-quadrant photodetector is the premise of subsequent correct signal analysis of four-quadrant photodetector when used in practice. In this paper, the relation between compound outputs of four-quadrant photodetector and the photovoltaic conversion coefficients of four channels are discussed by analyzing the light-path of four-quadrant photodetector. And the equations about the relation and the way to solve the equations set are also given. Then auto-revising balance of photovoltaic conversion coefficients of four channels are achieved by multiplying/dividing every photovoltaic conversion coefficient by an appropriate coefficient. From the waveforms of compound outputs of detector after auto-revising has been done, one finds that these waveforms have all the characters that the waveforms must have when photovoltaic conversion coefficients of four channels are equal to each other. So this method of auto-revising photovoltaic conversion coefficients of four channels is effective. It is obvious that high detect precision can be achieved with auto-revising balance because random errors carried manually can be eliminated. |
| 109 Parameter Calibration For Boron Post-Implant Transient Enhanced Diffusion |
pp. 1091-1095 |
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by : Jun Fu, Willem Crans, Wim Eysenga
Abstract: - Some of carefully selected parameters for modelling boron post-implant transient enhanced diffusion at 750 C were calibrated by using our inverse modelling optimizer “PROFILE” based on the best fitting of TSUPREM-4 simulation to the corresponding experimental data. As a result, boron marker layer’s broadening arising from boron TED is well reproduced by using self-interstitial clustering model in TSUPREM-4 with the corresponding calibrated model parameters. |
| 111 C–V And As Study Of Self-Assembled Ge Islands In Si P-N Junction |
pp. 1111-1114 |
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by : M.Shkil, V.Ilchenko, O.Tretyak, P.Chen, Z.Pei, M.Tsai
Abstract: - The electrical properties of self-assembled Ge quantum dots (QDs) and Ge quantum wells (QWs) embedded in Si p-i-n diodes were studied using capacitance-voltage measurements and admittance spectroscopy. The investigated samples were grown on Si(001) substrates by an ultra high vacuum chemical vapour deposition (UHV-CVD) system. A linear increase of the thermal activation energy observed in voltage-dependent admittance spectroscopy for the sample with quantum dots shows that the ensemble of Ge islands has a low, continuous, averaged density of states. |
| 114 Fabrication And Characterization Of 2-Dimensional Photonic Bandgap Crystal |
pp. 1141-1145 |
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by : C. I. Hsieh, H. L. Chen, W. C. Chao, F. H. Ko, S. C. Wu
Abstract: - In this paper, we demonstrate a simple and non-destructive measuring method for both TE and TM bandgaps of 2-dimensional (2D) silicon PBG by using reflected spectral ellipsometry. Although this measures the reflected light from samples, the transmitted signal of PBG layer can be measured by using reflecting signals. With large incident angles, planar PBG modulation effects and bandgap information can be obtained. To confirm this method, we fabricated silicon arrays for 2D PBG by using electron-beam lithography. From SEM pictures, we can verify the geometry especially the radius of the cells, which is related to the bandgaps. With a specific set of radii and dielectric constants, we can get the band diagram with plane-wave expansion method. There are several bandgaps of both TE and TM modes, and this sample can be used to detect multiple bandgaps. |
| 115 Human SNPs Genotyping by Single Base Extension on PNA Microarray |
pp. 1151-1154 |
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by : Jae Yang Song, Hyun Gyu Park
Abstract: - Large scale human genetic studies require technologies for generating millions of genotypes with relative ease but also at a reasonable cost and with high accuracy. We describe a novel system that allows high-throughput genotyping of single nucleotide polymorphisms (SNPs) on PNA microarray by single base extension (SBE) reaction. SBE reaction use bifunctional primers carrying a unique sequence tag in addition to a locus specific sequence. SBE primers are extended with biotin-labeled ddNTPs and stained with streptavidin-R-phycoerythrin after hybridization on PNA microarray. Seven SNPs related with diabetes disease were detected successfully through single-tube-SBE reaction. Genotypes are deduced from the fluorescence signals. Higher degrees of multiplexing would be possible with this method. |
| 116 Transport Models for Double-Gate Metal Oxide Semiconductor Field Effect Transistor Simulation |
pp. 1161-1166 |
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by : S.C. Lo, J.H. Tsai, Y. Li
Abstract: - Double-gate MOSFETs have been of great interest in these years. Simulation with drift-diffusion, hydrodynamic, Schrödinger-Poisson drift-diffusion, and density-gradient drift-diffusion models is performed to examine the model difference for double-gate MOSFETs. Different oxide thickness (TOX), TOX = 1.5, 2, 3, 4 nm, channel length, substrate doping concentration, and silicon film thickness are considered in this work. Device performance only can be estimated by using right transport model. In particular, there is a significant physical difference among the models for sub100 nm double-gate MOSFETs. |
| 117 A Study on Computational Efficiency for Parallel Semiconductor Device Simulation |
pp. 1171-1176 |
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by : J.H. Tsai, S.C. Lo, Y. Li
Abstract: - In this paper, the Drift-Diffusion (DD), Schrödinger –Poisson transport (SP) and Density Gradient transport models (DG) are computed by parallel direct method and three different meshes. According to the results, the DD and DG model cannot be good approximation of SP model with respect to electron density simulation. In addition, a dense mesh is necessary for simulation of quantum effect. Therefore, parallel computing is an important technique of semiconductor devices. Generally, simulation with two and four processors is about 1.6 ~ 1.8 and 2.8 ~ 3 times faster than that with one processor, respectively. In the case of efficiency, 0.8 ~ 0.9 and 0.7 ~ 0.75 are obtained for two and four processors, respectively. |
| 118 Design of Multi-Band Gap Photonic Crystals by Using Numerical Techniques |
pp. 1181-1185 |
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by : Yan Sun, Erping Li, Yaojiang Zhang, Mook Seng Leong
Abstract: - The fabrication of photonic crystals (PC) requires extremely high resolution and high expenses. It also requires the accurate modeling and prediction for the characteristics of a novel photonic crystal structure prior to any experimental fabrication. Our research aims to develop a few specific photonic structures which are able to control a multi-frequency band. Numerous proposed photonic structures are numerically simulated in this paper, by using the frequency-domain plane-wave method and scattering matrix method. Results obtained exhibit that few structures are able to achieve our expectation. |
| 119 Negative Differential Resistance Behavior of Thiolated Borazine Bonding with Gold Electrodes |
pp. 1191-1194 |
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by : Ping Bai, Erping Li
Abstract: - Electron transport properties of gold sandwiched thiolated borazine structure have been studied with first principles method Transiesta, which is based on density functional theory (DFT) and nonequilibrium Green's functions (NEGF's) to calculate the charge distribution for open metal-molecule-metal structures. The current-voltage (I-V) characteristics, density of states, and the transmission function of the structure are presented. The calculated results show that thiolated borazine has a nonlinear current-voltage characteristics with distinguishable negative differential resistance (NDR) behavior within bias range of 1.6V-3.0V. The origin of the mechanism leading to the characteristics is discussed based on density of states and transmission function. The NDR behavior is resulted from delocalization of the (HOMO) which is affected from applied bias voltages. |
| 120 Molecular Scale Organic Electroluminescence From Tunnel Junctions |
pp. 1201-1206 |
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by : Z.-C. Dong, X.-L. Guo, A. S. Ttifonov, P. S. Dorozhkin, S. Yokoyama, S. Mashiko, T. Okamoto
Abstract: - Ultrasmall light sources are valuable for high-resolution optical microscopy [1,2] and quantum information processing [3,4]. While optical pumping of dilute dye molecules in solids can generate single-molecule light sources [1-5], electrically driven analogues are desirable for electronic applications. However, the demonstration of single-molecule electroluminescence is very rare, amounting mainly to fluorescence from specific molecules on an oxide-buffered surface [6] and electroluminescence from different sizes of silver nanoclusters [7,8]. The reason behind this is the quenching of molecular fluorescence when a molecule is close to a surface [9,10]. The realization of molecular scale organic electroluminescence on surfaces would thus depend on how effectively the luminescent core can be decoupled from the substrate and how well a localized excitation source can be applied to individual molecules. Here we report a thin multilayer decoupling approach with nano-probe excitation to generating well-defined molecular fluorescence that is vibrationally resolved and on a molecular scale. Our approach features simplicity via self-assembly, room temperature ebipolarf operation, low operation voltages in the tunnelling regime, and good reproducibility. The research offers new understanding on how molecules behave optoelectronically in a nanoscopic environment. |
| 121 Low-Power CMOS SRAMs with Current-Mode Techniques |
pp. 1211-1217 |
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by : Shang-ming Wang, Ching-Yuan Wu
Abstract: - This paper describes two techniques for high-speed low-power SRAM¡¦s: a current-mode sense amplifier and a current-mode write driver. The sensing speed and write pulse width are insensitive to the bit-line and data-line capacitances and a separated positive feedback technique is used to enable the circuit to operate at high-speed and low-power. These techniques always keep the voltage swing of the bit-line and data-line quite small. Based on current-mode operation, a memory cell that operates at low-power current-mode is developed. The memory cell has almost equally sized access and inverter transistors, which can be toggled using a small differential bit-line voltage. An experimental 32Kx8 CMOS SRAM with a 9ns access time at a supply voltage of 3V, using 0.35um 1P2M CMOS logic technology is described to evaluate the new current-mode techniques. The active current is 28mA at 100MHz and 25¢J. |
| 122 Exploitation of Density of States and Mobility Difference Between Holes and Electrons for High Efficiency Solar Cells |
pp. 1221-1225 |
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by : Akeed Ahmed Pavel, M. Rezwan Khan
Abstract: - The main inherent reason behind the low efficiency of a p-n junction solar cell has been studied analytically. Prevention of internal recombination of electron hole pairs under illuminated condition seems to be a solution towards the enhancement of the cell efficiency. The mechanism of electron-hole recombination in an illuminated p-n homo-junction solar cell has been studied, with special reference to the mobility of the carriers and the density of states, to visualize the actual mechanism of carrier diffusion across the junction. Accordingly, potential structures that can effectively prevent the high rate of charge carrier diffusion across the junction have been proposed. Results presented here indicate that there can be significant enhancement in the cell efficiency for the proposed structures. |
| 127 Fabrication Of Nano-Scaled Alumina Template Mask By Using Self-Assembly Anodic Oxidation Method |
pp. 1271-1274 |
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by : T. Y. Cheng, C. H. Wu, J. T. Sheu
Abstract: - The conditions for the self-organized formation of ordered hexagonal structures in anodic alumina were investigated with the oxalic acid as an electrolyte. Highly ordered pore arrays membranes were obtained by using self-assembly two-step anodic aluminum oxidation (AAO) process without chromic acid. The size of the ordered domains depends strongly on the anodizing voltage. This effect is correlated with a voltage dependence of the volume expansion of the aluminum during oxidation and the current efficiency for oxide formation. The ordered and close-packed hexagonally arrangement nanochannels were obtained and an average diameter of about 50~60 nm. Field emission scanning electron microscopy (FESEM, Hitachi model S-4000) and commercial atomic force microscopy (AFM) were employed to characterize the nano-scaled AAO template membranes. |
| 128 Electrical Characteristics of Ultrathin Hafnium Oxynitrides Deposited On Si-Substrate |
pp. 1281-1286 |
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by : Jun-Yuan Chen, Jung-Chuan Chou, Hsueh-Tao Chou, Shu-Cheng Fang
Abstract: - Electrical characteristics of ultrathin Hafnium oxynitrides
deposited on Si-substrate |
| 129 Improvement of ultrathin Hafnium oxynitrides deposited on Si-substrate by adding gas ratio of N2/O2 |
pp. 1291-1295 |
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by : Hsueh-Tao Chou, Shu-Cheng Fang, Zong-Hong Zhang, Yi-Xiang Zhang, Kuo-Yu Wang
Abstract: - Improvement of ultrathin Hafnium oxynitrides deposited on
Si-substrate by adding gas ratio of N2/O2
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| 130 Experimental observation on Resonance of Split Ring Resonator |
pp. 1301-1306 |
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by :
A-Chuan Hsu,
Yi-Kai Cheng, Kuan-Hung Chen, Jyh-Long Chern
Abstract: - The resonance effect of planar split ring resonators (SRRs) was experimentally observed in the far-infrared region (~10.6£gm). The SRR patterns were fabricated by two kinds of metallic materials, aluminum and gold. Experimental results indicated that it exhibits resonance around 10.6£gm, implying the negative permeability in the FIR region. In this article, It also reported that the direction of the opening of outer SRR cells was not influence the resonance effect when the system was under magnetic field penetrating through the ring of SRR. |
| 131 The Effect Of Etching Parameters for Removal of Aao Template as Cu2o/Cu Nanowires Fabricated by Electrochemical Deposition |
pp. 1311-1314 |
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by : Y. H. Lee, I. C. Leu, M. T. Wu, J. H. Yen, M. H. Hon, K. Z. Fung
Abstract: - This article reports our recent results of electrochemically deposited Cu2O/Cu nanowires by AAO template assisted method. The deposited Cu2O/Cu nanowires were observed by SEM and TEM under different removal condition. The results indicated that the composition and surface morphologies strongly affected by the condition as the removal of AAO template. We find that the well-controlled condition of AAO removal is a key point to maintain the nano-structure. The optimum condition for AAO removal is decided as pH = 12 of NaOH solution. |
| 132 Geometric Effect on Electrical Characteristics for Sub10 nm Double Gate Metal-Oxide-Semiconductor Field Effect Transistors |
pp. 1321-1322 |
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by : Hung-Mu Chou, Jam-Wem Lee, Yiming Li
Abstract: - Double gate metal-oxide-semiconductor field effect transistors (DG MOSFETs) have recently been of great interest in modern nanoelectronics community. Device channel length L, thickness of silicon film (Tsi), and oxide thickness (Tox) play important role in optimal characteristics design for DG MOSFETs. In this paper, we investigate the geometric effect on electrical characteristics for ultrashort nanoscale (sub10 nm) DG MOSFET devices by considering quantum correction transport model. |
| 133 Highly Reliable Low Temperature Ultra Thin Oxides Grown by using N2O Plasma |
pp. 1331-1335 |
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by : Jam-Wem Lee, Yiming Li,
S. M. Sze
Abstract: - In this paper, the N2O plasma oxides in-situ grown on CF4 plasma pretreated silicon substrate is proposed and demonstrated having excellent characteristics. Those are precise thickness control, low temperature fabrication, low leakage current, and high reliability. Those good features will enhance the scaling down ability of CMOS devices. The mechanisms that make the process success are also discussed in this paper. Those achievements are caused from the incorporations of nitrogen and fluorine. Owing to the incorporations, the leakage current and the reliability are largely improved. It could be addressed that the low temperature oxides grown by N2O plasma are very attractive for novel CMOS VLSI circuit manufacturing; especially for the oxides grown on the CF4 plasma pre-treated substrates. |
| 135 The Characterization of HfO2 Thin Film Treatment by N2O |
pp. 1351-1354 |
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by : Chia - Chi Ma, Chao - Sung Lai, Ruey - Dar Chang
Abstract: - The physical and electrical characteristics of hafnium oxide (HfO2) in MOS capacitors with various annealing gas and annealing conditions were investigated. The results show that hafnium oxide with N2O annealing samples has best reliability than other ones. Besides, it is shown that HfO2 with N2O annealed sample has thicker thickness and smaller dielectric constant compared with other annealing conditions. This result may be contributed to that ionic oxygen penetrate through HfO2 films and react with silicon substrate. This can be found in cross-section TEM picture. In the above discussions, HfO2 is indeed an alternative gate dielectric for future VLSI gate applications for gate oxide < 12Å or below process. |
| 136 The Threshold Voltage Adjustment of Molybdenum Stack Gate by Nitrogen-Controlled Sputtering |
pp. 1361-1365 |
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by : Chao Sung Lai, Sheng Yao Yang, Ching Nan Hsiao, Kung Ming Fan, C. A. Huang
Abstract: - Stack MoN/Mo (110) crystallographic texture was used as metal gate for adjusting the Mo work function. We used a new approach by sputtering the MoNx/Mo films directly to form stack gate electrode by reactive with Ar and N2 gas mixture. The annealing process of the MoNx/Mo stack gate material post the sputtering changes the flatband voltage and electrical characterization. |
| 137 Fabrication of Hole-Array Metal Membrane by Two-Step Replication |
pp. 1371-1374 |
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by : C. L. Liao, C. W. Chu, Y. H. Lee, M. T. Wu, J. H. Yen, M. H. Hon, K. Z. Fung
Abstract: - The nano-technology was recently regarded as a very important field to research. In this work, we build up a Cu metal hole-array membrane by using the nano-technology of two-step replication technique and electrochemical deposition. The negative-type structure can be obtained from poly(methyl methacrylate) (PMMA). PMMA with low molecular weight (15000 and 70000 g/mole) was difficult to fabricate the negative-type structure from PAA template. The increasing molecular weight of PMMA to 965000 g/mole was helpful for the fabrication of negative-type PMMA. The length of PMMA nano-array was about 30mm. The Cu metal hole-array membrane can be electrochemically deposited into the bottom part of the negative-type PMMA nano-array. The morphology of Cu metal hole-array membrane was similar to the feature of commercial PAA mother template. |
| 138 Improved Characteristics of Ultra-Thin Cerium Dioxide with Rapid Thermal Annealing |
pp. 1381-1385 |
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by : Kuo Cheng Chiang, Jer Chyi Wang, Tan Fu Lei
Abstract: - In this study, the characteristics of ultra?Vthin cerium dioxide with rapid thermal annealing are investigated. The cerium dioxide film with post-deposition rapid thermal annealing exhibits the thin effective oxide thickness (EOT ~1.4nm for the RTA950oC sample) and superior properties. Based on the experimental results, the rapid thermal annealing can effectively improve the reliability and quality of the cerium dielectric film owing to the elimination of traps in the dielectrics and interfacial layer between CeO2/Si. In addition, the cerium dioxide has excellent thermal stability on Si substrate and high temperature to crystallize. The cerium dioxide with post-deposition rapid thermal annealing is a potential candidate for the future ultra-large scale integrated circuit (ULSI) applications. |
| 140 Fabrication Of La0.78sr0.22cuo2.5-Y Nanodots On Silicon Surface By Rf-Sputtering Using Nanoporous Anodic Alumina As Template |
pp. 1401-1405 |
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by : Ho-Chieh Yu, Yi-Huan Chen, Ming-Tao Wu, Jung-Hsien Yen, Kuan-Zong Fung
Abstract: - It have been investigated that the tetragonal perovskite La1-xSrxCuO2.5-?+ (LSCu) was presented in a narrow range of 0.2?Tx?T0.25. The structure stability of LSCu was greatly dependent on the strontium concentration. However, in this study, the trinary perovskite oxide, La0.78Sr0.22CuO2.5-?+, nanodots on the silicon surface have been produced by RF-sputtering using a template-assisted approach. Due to the step coverage limitation of RF-sputtering, the template should be from with the straight and through pores. The nanoporous anodic alumina templates were fabricated by two-step anodization process after aluminum thin film was deposited on the silicon substrate by E-beam evaporation. The pores of the template made by this approach were straight and through with 50 nm in diameter and 30 nm in length. By RF-sputtering using nanoporous anodic alumina as template, the La0.78Sr0.22CuO2.5-?+ nanodots on silicon surface were produced with a 50 nm in diameter. |
| 141 Lifetime Analysis of Quasistationary States in Open Superlattices |
pp. 1411-1414 |
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by : Ming-Chieh Lin
Abstract: - A complex eigen-energy method is presented to investigate lifetimes of the quasistationary states in open quantum heterostructures, open superlattices. The transfer matrix approach is employed to discretize the conduction-band profile of the heterostructure and form a dispersion equation whose zeros correspond to the complex eigen-energies. The quasistationary states are extracted numerically in the complex plane by Newton's method. Both the energy level and the lifetime of the quasistationary state are obtained simutaneously. The method has been proved numerically efficient and accurate by comparing with some results of the APM approach.The differences in lifetime between the quasistationary states in the open superlattices can be easily realized as all the wave functions are specially adjusted to form the relative probability density distributions. |
| 142 Using CD-Recorder to Fabricate Microfluidic Laboratory-on-a-CD Systems on CD-R |
pp. 1421-1426 |
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by : Yang-ren Rau, Kuang-pin Hsiung, Huey-jenn Chiang
Abstract: - This paper describes the potential use of dye-decomposing nature induced by CD-Recorder laser beam, which is utilized to encode digital information on CD-R media, to fabricate microfluidic laboratory-on-a-CD systems. Different from conventional methods, such as CNC-machining and photolithography techniques used for prototyping, and also various molding methods adopted for mass production, the use of CD-Recorder to fabricate laboratory-on-a-CD provides a simple and intuitive approach. For demonstrating the patterning capability of CD-Recorder here, on the same piece of CD-R, outer layer patterned with microfluidic structures selected from the published laboratory-on-a-CD devices for enzymatic assay; inner layer encoded with digital information, represented by a piece of music, implies its potential integration in automatic control of analytical procedures and programmatic data analysis. Since the duration necessary for producing a piece of laboratory-on-a-CD using CD-Recorder is less than 20 minutes, it shows advantageous in fast prototyping. Although current CD-Recorder and CD-R, is initially designed for storing digital information, however, in addition to photolithography and soft lithography, it could be modified to accommodate our proposed alternative function to fabricate microfluidic systems. |
| 146 Model of Four-Quadrant Photodetector |
pp. 1461-1466 |
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by : Xiaojun Tang, Junhua Liu, Liping Dang, Chen Jian
Abstract: - Photodetector is a kind of novel sensor. In this paper, a complete mathematical model of the light path of four-quadrant photodetector has been modeled. In the model, the effects of the mounted position of four-quadrant photodetector on the conversion from light to electricity, and the structure parameters of photodetector are considered. The relation expressions between the light signals, including lighting intensity and the incidence angle, the mounted position and structure parameters of four-quadrant photodetector, and the output signals are given. By analyzing the mathematical model, four feature parameters are extracted. With the mathematical model, arbitrary samples can be made. And with the samples, the inverse model of detector is approached using Neural Network (NN). The measurement results of distance between photosurface and focus of photodetector indicate that the model is correct. And the base for the application of four-quadrant photodetector is founded. |
| 147 Simulation Study of Carbon Nanotube Field Emission Device - from Ab-initio Field Emission Calculation to Macroscopic Electron Trajectory Simulation |
pp. 1471-1475 |
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by : Yung-Chiang Lan, Li-Gan Tien
Abstract: - The workfunction of capped single-walled zigzag (10, 0) carbon nanotube has been calculated by the plane-wave pseudopotential, density functional theory method. The calculated workfunction under no external applied field is 5.16 eV, which is in a good agreement with the experiment measurement. The relation between the workfunction and the external electric field is also established, which is then used in the macroscopic field emission model for the electron trajectory simulation. The electron trajectory simulation of the field emission display with planar-gate structure is performed. The simulation results exhibit that, in this type structure, the gate voltage has a strong effect on display¡¦s resolution. The good resolution is achieved when the gate voltage is adjusted to converge the electron beams on anode plate. Due to lack of field effect in y-direction, the electrons will diverge in this direction. So the spot size of the current density on anode plate and the resolution of the display will be affected by this factor. |
| 152 Modeling of Electromagnetic Band Gap Structure Devices Tuned By Ferrite Cylinders |
pp. 1521-1526 |
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by : Wang Quanxin, Zhang Yaojiang,
Li Erping, Ooi Ban Leong
Abstract: - This paper presents a novel approach to alternate the electromagnetic properties of the photonic band gap, where a ferrite defect is introduced, and in addition, a DC magnetic field is applied to alternate the EBG¡¯s electromagnetic property. Numerous devices are examined including a coupler and a Y-branch filter. The numerical experiments demonstrate that the devices electromagnetic characteristics can be easily adjusted by varying the DC magnetic field intensity. The simulations are performed by using the scattering matrix method. |
| 153 Controlling Factors of Drain Induced Barrier Lowering Coefficient in Short Channel MOSFET |
pp. 1531-1534 |
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by : B. Jharia, S. Sarkar, R. P. Agarwal
Abstract: - An analytical study of drain induced barrier-lowering coefficient in short channel MOSFET is presented. Analysis shows that the DIBL-coefficient is a non-linear decreasing function of drain-source voltage. This makes the resulting shift in threshold voltage to behave similarly. The threshold voltage-shift can be reduced by decreasing oxide thickness and increasing the substrate doping. The DIBL-coefficient decreases with increase in temperature and this decrease is more pronounced in short channel devices. |
| 154 paraBLAST: A Highly Scalable Parallelized BLAST Solution |
pp. 1541-1544 |
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by : Yutao Qi, Kin Keong Wong
Abstract: - Programs of the NCBI BLAST family have been widely used for retrieving homologous sequences from existing databases. This article briefly introduces and evaluates a parallelized version of the BLAST algorithm, paraBLAST, using Message Passing Interface (MPI) on a multi-node compute cluster. A dynamical database fragmentation scheme based on the availability of a compute cluster is proposed. Its application in querying nucleotide sequences against large-scale sequence databases is evaluated with different numbers of database fragments. As the tasks are made independent of each other, a highly scalable solution is achieved. |
| 156 ESD Protection Scheme for I/O Interface of CMOS IC Operating in the Power-Down Mode on System Board |
pp. 1561-1567 |
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by : Kun-Hsien Lin, Ming-Dou Ker
Abstract: - Design on ESD protection circuit for IC with power-down-mode operation is proposed. By adding a VDD ESD bus line and the diodes into the ESD protection scheme, the leakage current from the I/O pin to VDD power line can be blocked to avoid malfunction under the power-down-mode operating condition. Under normal circuit operating condition, the proposed ESD protection schemes have no leakage path to interfere with the normal circuit functions. Power-rail ESD clamp circuits between VDD ESD bus and VSS power line, or between VDD power line and VSS power line, are used to achieve the whole-chip ESD protection design. From the experimental results, the human-body-model ESD level of the proposed ESD protection schemes can be greater than 7.5kV in a 0.35-um CMOS process. |
| 157 Double-Triggered SCR with Enhanced Turn-on Speed for Effective ESD Protection in Nano-Scale CMOS Technology |
pp. 1571-1575 |
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by : Ming-Dou Ker, Kuo-Chun Hsu, Hsin-Chyh Hsu
Abstract: - Turn-on efficiency is the main concern for SCR device used as on-chip ESD protection circuits, especially in nano-scale CMOS processes with ultra-thin gate oxide. A novel double- triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in nano-scale CMOS processes. Two types of double-triggered SCR devices with shallow trench isolation or dummy gate structure are investigated in this work. From the experimental results in a 0.25-um CMOS process, the switching voltage and turn-on time of such two SCR devices have been significantly reduced by this double-triggered technique. |
| 159 Numerical Simulation of Nanoscale Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Devices |
pp. 1591-1596 |
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by : C.S. Tang, Yiming Li, T.S. Chao
Abstract: - A numerical model for physical characteristics simulation of nanoscale double-gate and gate-all-around Metal-Oxide-Semiconductor (MOS) under strong inversion is presented. Together with an effective potential quantum correction, one-dimensional (1D) Poisson equation with symmetric boundary conditions is solved in both Cartesian and cylindrical coordinates for single-gate, double-gate, and gate-all-around MOS structures. Comparison on these three different MOS structures is explored in terms of the total inversion layer charge and the average inversion charge depth. By considering the same surface potential, it is found that the concentration of the induced inversion charge for the gate-all-around MOS is significantly higher than the others. Therefore, this implies the gate-all-around MOS structure has better gate controllability and higher current density. |
| 160 Prehistoric Wall-Paintings Reconstruction Using Image Pattern Analysis And Curve Fitting |
pp. 1601-1606 |
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by : Th. Panagopoulos, C. Papaodysseus, M. Exarhos, C. Triantafillou, G.Roussopoulos, P.Roussopoulos
Abstract: - In the Greek island of Thera extraordinary wall-paintings dated from 1650 B.C.are excavated in many thousands of widely scattered fragments whose depiction manifests inhomogeneous colour decay, odd texture, cracks, added extraneous material etc. In this paper a colour image segmentation method as well as a pattern analysis in connection with these wall-paintings, are presented. The colour image segmentation method takes into account these problems and eventually offers very satisfactory, clear-cut and precise colour regions and region borders for each fragment depiction. Extensive pattern analysis to the obtained regions borders leads to the conclusion that 3650 years ago, the artist most probably used advanced geometrical methods in order to construct handcrafted “French curves” (stencils or templates) and use them to draw certain figures. On the basis of the above results, specific pattern matching techniques are employed for the reconstruction of wall-paintings depicting spirals, from their constituent fragments. |
| 161 One Possible Way Of Information Writting To Quantum Computer Devices |
pp. 1611-1616 |
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by : J. Tamuliene, A. Tamulis, V. Tamulis
Abstract: - The quantum mechanical investigations of the PyO and aza fullerene molecules have been performed.The investigations of NMR spectra indicate enought well separated lines tah allows us the aza-fullerene with adducts accepted as derivative generating up to 14 qubits of NMR quantum computer. The PyO molecule properties are exibited as applying for quantum information writting |
| 163 Characteristics Optimization of Sub10 nm Double Gate Transistors |
pp. 1631-1636 |
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by : Y. Li, J.W. Lee, H.M. Chou
Abstract: - Double gate metal-oxide-semiconductor field effect transistors (DG MOSFETs) have recently been of great interest in modern nanoelectronics community. Device channel length L, thickness of silicon film (Tsi), and oxide thickness (Tox) play important roles in optimal characteristics design for DG MOSFETs. In this paper, we theoretically investigate the geometric effect on electrical characteristics for nanoscale (sub10 nm) DG MOSFET devices by considering quantum correction transport model. We find that the thickness of silicon film should be simultaneously scaled down to a regime of the gate length. The thinner channel film greatly suppresses the short channel effect, but also suffers the on current issue. A compromise between the silicon film thickness and the gate channel length should be maintained at the same time so that an optimal device characteristic can be obtained. This investigation is useful for nanodevice and re-configurable design of system-on-a-chip (SOC) era. |
| 164 Mass Production of Nanostructures |
pp. 1641-1644 |
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by : Babak Heidari, Lars Montelius
Abstract: - A Compact Disc manufacturing process has been used to produce nanometer-sized structures. In this paper, different process steps are studied and discussed. Stamp fabrication and CD-replication process are described in detail. In this work, 50-polycarbonate discs were replicated from one 6-inch nickel stamp with structures as small as 50nm and the result is analysed. We also show the possibility to replicate 50nm wide structures over large areas. |
| 165 A Miniaturized Monolithic 2.4/5.7 GHz Concurrent Dual-Band Low Noise Amplifier Using InGaP/GaAs HBT Technology |
pp. 1651-1655 |
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by : kun-Nan Liao, Yo-Sheng Lin,
Abstract: - This paper presents the design and experimental results of a miniaturized monolithic 2.4/5.7 GHz concurrent dual-band low noise amplifier with cascade configuration using InGaP/GaAs HBT technology for the first time. The first stage of the LNA provides high gain and input matching simultaneously at both 2.4 GHz and 5.7 GHz bands. The output matching of the second stage is realized by shunt-shunt feedback. It consumes only 9 mW power and achieves transducer gains (S21) of 24.8 dB and 15.7 dB, input return losses (S11) of 23.6 dB and 22.6 dB, output return losses (S22) of 15.3 dB and 21.5 dB, reverse isolation (S12) of -48.0 dB and -44.4 dB, and noise figures of 3.42 dB and 2.72 dB at 2.4 GHz and 5.7 GHz, respectively. The LNA only occupies an area of 650 µm × 300 µm excluding the test pads because only two inductors are used. |
| 166 PN Junction Surface Potential Images Measured by Kelvin Probe Force Microscopy |
pp. 1661-1664 |
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by : Po-chih Su, Chih-ming Hsieh, Bing-yue Tsui
Abstract: - Kelvin probe force microscopy (KFM) was applied for two-dimensional pn junction surface potential imaging. It is demonstrated that the surface potential of semiconductor materials can be measured by controlling the voltage between the tip and the sample. Besides noise of the equipment, the sample surface treatment exhibit significant influence on the potential images. In addition, qualitative measurement of dopant concentration is also shown in this paper. |
| 168 Acidity -Dependent Electro-osmotic Mobility in surfactant-coated silica microchannels |
pp. 1681-1683 |
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by : Shau-Chun Wang, Chia-Yu Lee
Abstract: - We have derived a theory to predict the electro-osmotic mobility dependence on buffer pH values in surfactant-coated fused silica capillary. Using the surfactant aggregation density data obtained with atomic force microscopy and dissociation degree data from electro-osmotic mobility in bare channels, we have successfully predicted the mobility tendency at different pH values in the surfactant-coated channel. |
| 169 Crosstalk Noise Estimations Of Interconnects For Nanoelectronics |
pp. 1691-1696 |
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by : Herng-jer Lee, Chia-chi Chu, Wu-shiung Feng
Abstract: - A novel method is proposed to accurately and efficiently estimate the inductive crosstalk noise waveform on interconnects in nanometer VLSI designs. The method is on the basis of the moment computation technique in conjunction with the projection-based order reduction method. The interconnects are modeled as nonuniform distributed coupled RLC transmission lines. Recursive formulae of moments of coupled RC trees are extended to those of coupled RLC trees by considering both self inductances and mutual inductances. It can be observed that moment computations of distributed lines outperform those of lumped ones. Fundamental developments of the proposed approach are described in details. Experimental results demonstrate the improved accuracy of the proposed method over that of the traditional lumped methods. |
| 171 Temperature-Dependent Loss Mechanisms For Microstrip And Cpw Interconnects On Silicon Substrate |
pp. 1711-1715 |
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by : Ming-Hsiang Cho
Abstract: - This paper presents the loss mechanisms of metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) interconnects in silicon technology. Both MIS/MIM microstrip lines and coplanar waveguides (CPWs) fabricated using 0.18 mm 6-level CMOS process have been characterized over wide ranges of frequency and temperature. We also develop the frequency-independent equivalent-circuit models to simulate the loss characteristics of the interconnects. Excellent agreement between the simulation and measurement results is demonstrated up to 20 GHz. |
| 172 Testing of Infrared Focal Plane Array |
pp. 1721-1726 |
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by : Meng-lieh Sheu
Abstract: - The increase in array size and decrease in pixel size make the testing of infrared focal plane array (IR FPA) being difficult. In this paper, I will demonstrate a test socket chip for easily testing large array size FPA by measuring dark currents of IR sensors. A calibration technique of leakage current is applied to certify the correctness of measurement. I will also show a crosscheck test scheme for efficiently testing FPA. For an array size of M by N, the testing times can be reduced from the order of M*N to M+N. Analysis on the detection of proposed fault model by the crosscheck test scheme is also presented in this paper. |
| 173 Inductor Modeling Of Integrated Passive Device For Rf Applications |
pp. 1731-1735 |
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by : Yuan-chia Hsu, Meng-lieh Sheu
Abstract: - In this paper, an integrated passive device (IPD) inductor modeling is demonstrated. The IPD technology is a system in package (SiP) solution where passive devices with high quality can be fabricated on a chip and then connect with another circuit chip by using flip-chip micro-bump bonding. For an RF circuit simulation, the IPD inductor model is built and verified from the measurement results. |
| 174 Nanotechnology for Fabrication of Film Elements, Powder-Like and Bulk Materials Using Electroless Deposition and Surface Modification |
pp. 1741-1748 |
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by : T. N. Khoperia, T.I. Zedginidze, L.G. Maisuradze and N.T. Khoperia
Abstract: - The proposed nanotechnology for the first time allows fabrication of photomasks and microdevices with nano-sized adjacent elements of different thickness made of various materials by single conventional optical photolithography. These advantages significantly extend functional capabilities of the device and simplify removal of undesirable gases and heat dissipation. These nanotechnologies are promising for production of unique photomasks with semitransparent nano-sized elements; nanodevices; templates for fabrication of nanowires; microelectrodes for local micro- and nano- electrodeposition and etching techniques, etc. There are also proposed the methods of fabricating the ultra-thin void-free and pore-free electroless coatings and clusters on micro-, meso- and nano-sized particles. These methods allow us to obtain nanostructured composite materials and coatings with the specified catalytic activity, conductive nano-sized additives to plastics and rubber, nanoparticle-reinforced tires, novel sensors, detectors of chemical and biological agents, adsorbents, hydrogen storage materials, etc. The method for fabrication of nanocavities, nano-sized holes, in silicon photonic crystals (for application in photonic chips, nonlinear optics, ultra-small filters, quantum information processing, etc.) by conventional optical photolithography is under development. |
| 175 Optical Techniques For Fabrication Of Microball Lens Arrays |
pp. 1751-1757 |
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by : C. T. Pan, S.C. Shen, J. Z. Zha
Abstract: - In the study, a novel concept of batch-fabrication microball lens array has been successfully demonstrated on the silicon wafer. Not only can this batch-fabrication microball lens provide accurate coupling distance to improve the optical coupling efficiency in free space, but also can replace traditional way such as aspheric lens or expensive GRIN without sacrificing performance and can reduce micro-assemblage cost. The result reveals that the aspect ratio of H/D plays a significant effect on the formation of microball lens array, where H is the thickness of photoresist, and D is the diameter of the photoresist. Measurement result shows that using 635 nm wavelength laser, the optimum coupling distance is about 8um with an insertion loss below 1.3 dB (coupling efficiency about 73%). |
| 176 Improvement of Thin Gate Dielectrics Reliability by High Temperature Oxidation using N2O and O2 Ambient |
pp. 1761-1764 |
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by : T. L. Lee, C. Y. Chen, J. W. Lee, T. F. Lei, C. L. Lee
Abstract: - In this paper, we proposed the high temperature oxidation method to grow thin gate dielectric film (EOT < 30Ả) in dilute N2O and O2 ambient. As the previous study, nitrogen incorporation can promote the gate oxide reliability. However, excess nitrogen incorporation will also deteriorate performance of gate dielectrics. Therefore, we grew the gate dielectrics at high temperature for very short time. Due to dilute N2O gas, the electrical properties of the gate dielectrics can be improved. In addition, this film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. It appears to be promising for future VLSI devices. |
| 177 A criterion of warpage about center-anchored deformable focusing micromirrors |
pp. 1771-1775 |
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by : Meng-Ju Lin
Abstract: - A criterion to determine the warpage condition of centered anchored deformable focusing mirrors is derived. With the material properties, structure size, and fabricating process temperature, a nondimensional number can be used to determine the deformable focusing mirror is warpage or not. The result shows when the thickness of depositing layer increasing, the warpage temperature decreases. However, as the thickness of structure plate increasing, the warpage temperature increases nonlinearly. Under some conditions, even the temperature increases over the melting temperature of metal, the focusing mirror would not become warpage. The effect of outer radius on warpage temperature is also discussed. It shows as the outer radius increasing, the warpage temperature decreases fast and reaches a limit temperature. |
| 178 Temperature Dependence of Q and Noise in Monolithic Transformer Fabricated in a Silicon-Germanium/BiCMOS Technology |
pp. 1781-1789 |
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by : Hsiao-Bin Liang, Tao Wang, Yo-Sheng Lin, Shen-Hong Wu, Shey-Shiey Lu
Abstract: - In this paper, the first time for demonstrating the analysis of the temperature effect (0 ~ 175oC) upon the quality factor (Q-factor) and noise figure (NF) performance in the transformer which is fabricated on the silicon substrate technology is presented. The experimental data shows that the Q-factor of the primary and secondary coils in the transformer decreased with increasing temperature but showed a reverse behavior at a higher frequency range. The measurement data also shows the variation of quality factor under various temperature conditions influences the maximum available power gain (GAmax) of the transformer, which is the reciprocal of minimum noise figure (NFmin) in a passive device. |
| 179 Gate Tunneling Current Calculation of Nanoscale MOSFETs with a Unified Quantum Correction SPICE Model |
pp. 1791-1796 |
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by : Shao-Ming Yu, Jam-Wem Lee, Yiming Li
Abstract: - In this paper, an analytical quantum correction model for ultrathin oxide MOSFET devices is proposed. With this novel SPICE-compatible model, the gate tunneling current is precisely calculated without any complicated quantum mechanical models. The proposed model is optimized with respect to (i) the position of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. Comparing with the conventional approach to direct tunneling current calculation, the proposed model demonstrates good agreement with the quantum mechanical simulation. Make it more clearly that the quantum correction technique can be unified used in modeling the quantum confinement effects in gate tunneling current, gate to channel capacitance, and channel current. Our quantum correction model can accurately account quantum effects of nanoscale MOSFET and can directly be implemented into vary large scaled integration (VLSI) circuit simulation. |
| 182 Hardware Architecture For Modified Sequential Ldpc Decoder |
pp. 1821-1827 |
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by : Angus Wu, L. W. Lee
Abstract: - Iterative decoding of Low Density Parity Check (LDPC) codes using the Parity Likelihood Ratio (PLR) algorithm have been proved to be more efficient compared to conventional Sum Product Algorithm (SPA). However, the nature of PLR algorithm tends to put numerious pieces of data to this decoder and perform computation intensive operations, which is a major challenge for building a practical real-time LDPC decoder. In this paper, it makes use of extrinsic information clipping and calculation step merging techniques to simplify the decoding algorithm. These approaches reduce the number of quantization levels while still remaining the algorithmic performance promised by random codes. Moreover, a modified sequential architecture is proposed for LDPC decoding that decreases the decoding latency and reduces the memory storage compared to existing direct sequential design. Simulation results show that the proposed architecture results in time and memory savings of up to 92.26% and 59.56% respectively over conventional direct sequential implementation |
| 184 Efficient VLSI parallel Implementation for ldpc Decoder |
pp. 1841-1847 |
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by : Angus Wu, L. W. Lee
Abstract: - Iterative decoding of Low Density Parity Check (LDPC) codes using the Parity Likelihood Ratio (PLR) algorithm have been proved to be more efficient compared to conventional Sum Product Algorithm (SPA). However, the nature of PLR algorithm tends to put numerious pieces of data to this decoder and perform computation intensive operations, which is a major challenge for building a practical real-time LDPC decoder. In this paper, we employ extrinsic information clipping and calculation step merging techniques, which are used in modified sequential architecture, into the parallel implementation of LDPC decoder. The proposed parallel architecture decreases the decoding latency without increases the memory storage compared to existing modified sequential design. Simulation results show that the proposed architecture results in time savings of up to 96.12% and 37.94% over conventional direct sequential implementation and modified sequential design respectively. |
| 188 Nanosilicon memories with ultra-thin Silicon Dioxides: Electrical Measurements |
pp. 1881-1885 |
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by : Laurent Montes, Stephane Ferraton, Ionica Ionica, Xavier Mescot, Mickael Tihy, Abdelkader Souifi, Jacques Zimmermann
Abstract: - In this paper we present different original electrical techniques such as constant capacitance, quasistatic feedback charge capacitance and low frequency noise, to investigate the charge and discharge dynamics of nanosilicon memories. These memories are similar to conventional non-volatile memories but the floating gate is replaced by silicon nanocrystals and the oxide films are only a few nanometers thick. We can evaluate precisely the quantity of stored charge, about one electron for two nanocrystals. The constant capacitance method is used to investigate the charge and discharge dynamics at flatband capacitance, ensuring a minimum effect of the external field. The quasistatic feedback charge method is used as a powerful technique to dissociate the displacement current from the leakage current passing through a tunnel oxide to the silicon nanocrystals. Finally low frequency noise reveals the presence of the nanocrystals, dissociated from other traps responses. The complementary aspects of these specific methods is detailed, presenting superior advantages over conventional electrical measurements for nanoelectronic devices such as the multi-monoelectronic devices studied here and structures with ultra-thin oxide films. |
| 189 Quantum Mechanical Simulation of High-k Gate Dielectrics Metal-Oxide-Semiconductor Structures |
pp. 1891-1894 |
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by : S.-C. Lo, Y. Li, J.-H. Tsai
Abstract: - High-k dielectric materials are being considered as replacement for SiO2 as the gate dielectric since the high physical thickness can reduce the tunneling current while retaining the low equivalent oxide thickness (EOT) required next generation Metal-Oxide-Semiconductor field effect transistors (MOSFET’s). In this paper, we simulate the capacitance – voltage (C-V) of n-type MOS devices with different high-k dielectric insulator numerically. According to the results, high-k dielectric materials maintain the capacitance and provide a robust physical thickness preventing tunneling current. Capacitance of high-k dielectrics couldn’t be estimated by capacitance of insulator with EOT directly because an 8 % difference of capacitance among materials is observed in an extreme case. To obtain a accurate result, a self-consistent Schrödinger – Poisson equation should be considered. |
| 190 Strain Effects On Pyramidal Inas/Gaas Quantum Dot |
pp. 1901-1905 |
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by : Tzy-rong Lin, Po-ting Liao, Mao-kuen Kuo
Abstract: - In this work, models based on linear elasticity and thermal stress theory are developed to evaluate the strain distribution in the pyramidal InAs/GaAs quantum dot. The lattice mismatch in heterostructures induces the strain field which calculated by finite element package – FEMLAB. The steady state Schrödinger equation, including the strain-induced potential, is also solved by means of the finite element method. The solutions consist of eigenenergy and the probability density function of conduction band. We treat the models by two different approaches, anisotropic materials analysis and isotropic material simplification. Our results show that strain effects shift the eigenenergy and the degeneracy of low eigenenergy. When considering the eigenenergy and the corresponding probability density function, the differences between two methods are small. Therefore, it is suitable to treat InAs and GaAs as an isotropic material. |
| 191 On the Performances and Improvements of Motion-Tuned Wavelets for Motion |
pp. 1911-1916 |
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by : Brault P.
Abstract: - The Spatio-Temporal Motion-TunedWavelet Transform is a construction started around the early 90’s and that has been investigated in particular for motion-tracking purposes. Recently this approach has been reviewed in new applications of motion estimation applied either to video compression or to scene analysis. We show in this paper some performances reached with such constructions and make a comparison with another close construction based on the optical flow computation. We also discuss improvements of the construction of the MTSTWT and show which results can be reached with this interesting wavelets family. |
| 194 The Application of the Principle for Synthesizing Measurements of Multiple System Parameters into A Single Parameter to Optimization Analysis of Bracing Systems for Deep Foundation Pits |
pp. 1941-1946 |
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by : Ying Liao, Qiangguo Pu, Nikos Mastorakis
Abstract: - The optimization analysis of bracing systems for deep foundation pits is a rather complex problem of system engineering which relates to many indexes belonging to safety and feasibility, economy and rationality, environmental protection and convenience of construction. In this paper, the evaluation index system of bracing systems for deep foundation pits is established; every index¡¯s overall sorting weight is determined; the comprehensive evaluation results are obtained to evaluate the degree of superiority and inferiority of bracing schemes by means of the system parameter fusion principle; and then the optimum scheme is concluded. |
| 195 The Quality Functions in the Principle for Synthesizing Measurements of Multiple System Parameters into a Single Parameter |
pp. 1951-1955 |
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by : Qiangguo Pu, Nikos Mastorakis
Abstract: - Modern technology provides a great amount of information. But for computer monitoring systems, we need to reduce the number of variables to one or two parameters which express the quality and/or security of the whole system. This paper presents the quality functions in the principle for synthesizing measurements of multiple system parameters into a single parameter. |
| 196 The Application Of The Principle For Synthesizing System Parameters Into A Single Parameter To Fuzzy Pattern Recognition |
pp. 1961-1965 |
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by : Qiangguo Pu, Yunzhong Song, Nikos Mastorakis
Abstract: - Modern technology provides a great amount of information. In computer monitoring systems or computer control systems, especially real-time expert systems, in order to have the situation in hand, we need one or two parameters to express the quality and/or security of the whole system. This paper presents the application of the principle for synthesizing measurements of multiple system parameters into a single parameter to fuzzy pattern recognition. |
| 197 A Data Mining Algorithm based on Genetic Algorithm |
pp. 1971-1976 |
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by : Yun Bai, Deyu Qi, Qiangguo Pu, Nikos Mastorakis
Abstract: - Data Mining (DM) is a new hot research point in Database technology area. In this paper, we discuss the application of genetic algorithm (GA) in DM, and bring forward the basis idea and key design question of the new DM algorithm based on GA, such as knowledge rule expression, knowledge rule coding, fitness function definition. We illustrate the validity of the new DM algorithm by the given instance. |
| 198 Comparative Assessment of Fiber Optic Strain and Curvature Sensors |
pp. 1981-1985 |
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by : Alexandar Djordjevich, Rui Zhang
Abstract: - Fiber optic strain sensors are routinely embedded into composite materials to monitor the condition of the host structure or the mechanical loads applied to it. Main conceptual features of these sensors are presented in the first part of this paper. They are then contrasted with a highlight from literature reports about their ill-suitability for their main purpose: strain sensing. The alternative means of monitoring structural deflection-curvature as a means of assessing structural deformation (or external loads) is presented next. It is followed by an overview of selected curvature measurement concepts. The application domain is specified in which the curvature measurement offers advantages over the alternative of measuring strain in terms of the measurement sensitivity, flexibility to choose the location for the sensor placement, and immunity to the effects of microstructural interfacing between dissimilar materials that the sensor presence introduces. |
| 230 Corner Change Singularity of Conductors using last-passage algorithms |
pp. 2301-2302 |
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by : Chi-Ok Hwang
Abstract: - In this paper, we introduce a diffusion-based Mone Carlo method, the last-passage algoritms and demonstrate the possibility of evaluating the power-law singularity associated with the corner of a conductor for the computation capacitance coeffcients for very large scale integration (VLSI) interoonnects.We illustrate our method in the solution of a benchmark problem, the charge singularity at the corner of the unit square plate. The result is in good agreement with the previous result by Morrison and Lewis. Furthermore, it should be noted that the method for determining corner singularities is completely general;it is not limited to the 2-D rectangular corner geometry. |
| 250 Two Dimensional Photonic Bandgap Structure for Microstrip Circuits on Silicon Substrate |
pp. 2501-2505 |
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by : Min-Hung Weng, Shich-Chuan Wu, Tsung Hui Huang, Han-Ding Hsueh, Ru Yung Yang, Mau-Phon Houng
Abstract: - In this paper, the photonic bandgap (PBG) structure of the henoycomb-circle (HC) type is verified to have bandgap effect for microstrip circuit on silicon substrate at microwave region. The electromagnetic wave of the TE-mode and TM-mode are obtained to understand the bandgap effect, according to the filling factor and the cell distance of the PBG structure by using the Plane Wave Expansion method. And then the full wave electromagnetic simulation tool is also used to simulate and verify the bandgap effect of the proposed PBG structure. Therefore, the designed circuit will be suitable to applicable to suppress the spurious response in the MMIC. |